JPH051626B2 - - Google Patents

Info

Publication number
JPH051626B2
JPH051626B2 JP60021813A JP2181385A JPH051626B2 JP H051626 B2 JPH051626 B2 JP H051626B2 JP 60021813 A JP60021813 A JP 60021813A JP 2181385 A JP2181385 A JP 2181385A JP H051626 B2 JPH051626 B2 JP H051626B2
Authority
JP
Japan
Prior art keywords
region
drain
mos transistor
well region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60021813A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61182264A (ja
Inventor
Koichi Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP60021813A priority Critical patent/JPS61182264A/ja
Priority to US06/826,772 priority patent/US4819044A/en
Publication of JPS61182264A publication Critical patent/JPS61182264A/ja
Publication of JPH051626B2 publication Critical patent/JPH051626B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
JP60021813A 1985-02-08 1985-02-08 縦型ｍｏｓトランジスタ Granted JPS61182264A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60021813A JPS61182264A (ja) 1985-02-08 1985-02-08 縦型ｍｏｓトランジスタ
US06/826,772 US4819044A (en) 1985-02-08 1986-02-06 Vertical type MOS transistor and its chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60021813A JPS61182264A (ja) 1985-02-08 1985-02-08 縦型ｍｏｓトランジスタ

Publications (2)

Publication Number Publication Date
JPS61182264A JPS61182264A (ja) 1986-08-14
JPH051626B2 true JPH051626B2 (en]) 1993-01-08

Family

ID=12065498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60021813A Granted JPS61182264A (ja) 1985-02-08 1985-02-08 縦型ｍｏｓトランジスタ

Country Status (2)

Country Link
US (1) US4819044A (en])
JP (1) JPS61182264A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05246301A (ja) * 1992-03-06 1993-09-24 Toyota Motor Corp エアバッグ装置用衝突センサの配置構造

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929991A (en) * 1987-11-12 1990-05-29 Siliconix Incorporated Rugged lateral DMOS transistor structure
JPH01215067A (ja) * 1988-02-24 1989-08-29 Hitachi Ltd 縦型絶縁ゲート電解効果トランジスタ
JPH0817234B2 (ja) * 1988-07-20 1996-02-21 富士電機株式会社 半導体集積回路
FR2649828B1 (fr) * 1989-07-17 1991-10-31 Sgs Thomson Microelectronics Circuit integre vdmos/logique comprenant un transistor vertical deplete et une diode zener
EP0416805B1 (en) * 1989-08-30 1996-11-20 Siliconix, Inc. Transistor with voltage clamp
JP2701502B2 (ja) * 1990-01-25 1998-01-21 日産自動車株式会社 半導体装置
JP2692350B2 (ja) * 1990-04-02 1997-12-17 富士電機株式会社 Ｍｏｓ型半導体素子
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
US5304831A (en) * 1990-12-21 1994-04-19 Siliconix Incorporated Low on-resistance power MOS technology
JP2579702B2 (ja) * 1991-02-08 1997-02-12 株式会社 神戸製鋼所 ホイールクレーン
GB9207849D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor device
US5430314A (en) 1992-04-23 1995-07-04 Siliconix Incorporated Power device with buffered gate shield region
US5701071A (en) * 1995-08-21 1997-12-23 Fujitsu Limited Systems for controlling power consumption in integrated circuits
US6747315B1 (en) * 1999-07-15 2004-06-08 Rohm Co., Ltd. Semiconductor device having MOS field-effect transistor
DE10217610B4 (de) * 2002-04-19 2005-11-03 Infineon Technologies Ag Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren
DE10262169B4 (de) * 2002-04-19 2016-11-03 Infineon Technologies Ag Halbleiterbauelement und integrierte Schaltungsanordnung damit
JP4272854B2 (ja) * 2002-07-10 2009-06-03 キヤノン株式会社 半導体装置及びそれを用いた液体吐出装置
JP4202970B2 (ja) * 2004-06-10 2008-12-24 株式会社東芝 半導体装置及びその製造方法、半導体装置の欠陥検出方法
KR100648276B1 (ko) 2004-12-15 2006-11-23 삼성전자주식회사 역방향 다이오드가 구비된 수직형 디모스 소자
US9484451B2 (en) * 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
CN106575666B (zh) 2014-08-19 2021-08-06 维西埃-硅化物公司 超结金属氧化物半导体场效应晶体管

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2916114A1 (de) * 1978-04-21 1979-10-31 Hitachi Ltd Halbleitervorrichtung
DE3012185A1 (de) * 1980-03-28 1981-10-08 Siemens AG, 1000 Berlin und 8000 München Feldeffekttransistor
US4345265A (en) * 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability
US4399449A (en) * 1980-11-17 1983-08-16 International Rectifier Corporation Composite metal and polysilicon field plate structure for high voltage semiconductor devices
JPS57206073A (en) * 1981-06-12 1982-12-17 Hitachi Ltd Mis semiconductor device
US4532534A (en) * 1982-09-07 1985-07-30 Rca Corporation MOSFET with perimeter channel
JPS5998557A (ja) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Ｍｏｓトランジスタ
JPS59149056A (ja) * 1983-02-15 1984-08-25 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
JPS59231862A (ja) * 1983-06-13 1984-12-26 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
US4631564A (en) * 1984-10-23 1986-12-23 Rca Corporation Gate shield structure for power MOS device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05246301A (ja) * 1992-03-06 1993-09-24 Toyota Motor Corp エアバッグ装置用衝突センサの配置構造

Also Published As

Publication number Publication date
JPS61182264A (ja) 1986-08-14
US4819044A (en) 1989-04-04

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term